PART |
Description |
Maker |
GN1L4L GN1L4L-T2 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC[NEC]
|
GA1L3M GA1L3M-T2 GA1L3M-T1 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC[NEC]
|
GN1L4M GN1L4M-T2 GN1L4M-T1 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC
|
GN1F4N GN1F4N-T1 GN1F4N-T2 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC
|
GN1F4M GN1F4M-T2 GN1F4M-T1 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC
|
GA1A4Z GA1A4Z-T2 GA1A4ZL69-T1 |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323 晶体管| 50V五(巴西)总裁| 100mA的一(c)|的SOT - 323 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR SUPER MINIMOLD PACKAGE-3 MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR Hybrid transistor
|
NEC, Corp.
|
2SA2091S 2SA2091STPQ |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN Medium power transistor (60V/ 1A) Medium power transistor (−60V, −1A) Medium power transistor (-60V, -1A)
|
TE Connectivity, Ltd. ROHM[Rohm]
|
2SC2411K 2SC1741S 2SC4097 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) Medium Power Transistor (32V, 0.5A) Medium Power Transistor (32V 0.5A) Medium Power Transistor (32V/ 0.5A)
|
ROHM[Rohm]
|
STC03DE170HV07 STC03DE170HV |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 } Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics STMicroelectronics
|
CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
AA1L3N AA1L3N-T/JD AA1L3N-T/JM AA1L3N/JD AA1L3N/JM |
On-chip resistor NPN silicon epitaxial transistor For mid-speed switching Hybrid transistor
|
NEC Corp. NEC[NEC]
|